2SD667

2SD667

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Technical specifications:
Manufacturer Jiangsu Changjing Electronics Technology Co., Ltd.
Package ---
Datasheet 2SD667
Description ---

sellers 2SD667


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Specifications

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. 2SD667
  • Transistor Type NPN
  • Operating Temperature +150°C@(Tj)
  • Collector Current (Ic) 1A
  • Power Dissipation (Pd) 900mW
  • Transition Frequency (fT) 140MHz
  • DC Current Gain (hFE@Ic,Vce) 100@150mA,5V
  • Collector Cut-Off Current (Icbo) 10uA
  • Collector-Emitter Breakdown Voltage (Vceo) 80V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1V@500mA,50mA
  • Package TO-92
  • Manufacturer Jiangsu Changjing Electronics Technology Co., Ltd.

Sellers


Price 
2SD667 2SD667 No price Online shopping

Last shop price change:

2SD667 2SD667 No price The price of this shop's products has not been updated! Online shopping

Last shop price change:

2SD667 2SD667 Not Available 8550 IRT Online shopping

Last shop price change:

2SD667 2SD667 Not Available No price Online shopping

Last shop price change: