IS61WV6416EEBLL-10BLI
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| Manufacturer | ISSI(Integrated Silicon Solution) |
| Package | 48-TFBGA |
| Datasheet | IS61/64WV6416EEBLL |
| Description | SRAM - Asynchronous Memory IC 1Mb (64K x 16) Parallel 10ns 48-TFBGA (6x8) |
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规格
- RoHS true
- Category Memory/SRAM
- Datasheet ISSI(Integrated Silicon Solution) IS61WV6416EEBLL-10BLI
- Memory Size 1Mbit
- upply Voltage (Vcc) 2.4V~3.6V
- Operating Temperature -40°C~+85°C
- Package TFBGA-48(6x8)
- Manufacturer ISSI(Integrated Silicon Solution)
- Series -
- Packaging Tray
- Part Status Active
- Memory Type Volatile
- Memory Format SRAM
- Technology SRAM - Asynchronous
- Memory Interface Parallel
- Write Cycle Time - Word, Page 10ns
- Access Time 10ns
- Voltage - Supply 2.4V ~ 3.6V
- Mounting Type Surface Mount
- Package / Case 48-TFBGA
- Supplier Device Package 48-TFBGA (6x8)
- detail SRAM - Asynchronous Memory IC 1Mb (64K x 16) Parallel 10ns 48-TFBGA (6x8)
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