PSMN2R4-30YLDX
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| Manufacturer | Nexperia |
| Package | --- |
| Datasheet | PSMN2R4-30YLDX |
| Description | --- |
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Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Nexperia PSMN2R4-30YLDX
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 106W
- Total Gate Charge (Qg@Vgs) 31.3nC@10V
- Drain Source Voltage (Vdss) 30V
- Input Capacitance (Ciss@Vds) 2256pF@15V
- Continuous Drain Current (Id) 100A
- Gate Threshold Voltage (Vgs(th)@Id) 2.2V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 2.4mΩ@10V,25A
- Package LFPAK-56
- Manufacturer Nexperia
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