3DD13005ED-126S
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| Manufacturer | Jilin Sino-Microelectronics |
| Package | --- |
| Datasheet | 3DD13005ED-126S |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Jilin Sino-Microelectronics 3DD13005ED-126S
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 4A
- Power Dissipation (Pd) 40W
- Transition Frequency (fT) 4MHz
- DC Current Gain (hFE@Ic,Vce) 20@500mA,10V
- Collector Cut-Off Current (Icbo) 100uA
- Collector-Emitter Breakdown Voltage (Vceo) 400V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1V@2A,400mA
- Package TO-126
- Manufacturer Jilin Sino-Microelectronics
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