BFP 843F H6327
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | BFP 843F H6327 |
| Description | --- |
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规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Infineon Technologies BFP 843F H6327
- Transistor Type -
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 55mA
- Power Dissipation (Pd) 125mW
- Transition Frequency (fT) -
- DC Current Gain (hFE@Ic,Vce) 260@15mA,1.8V
- Collector Cut-Off Current (Icbo) 400nA
- Collector-Emitter Breakdown Voltage (Vceo) 2.25V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) -
- Package TSFP-4-1
- Manufacturer Infineon Technologies
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