BD676AG
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| Manufacturer | ON Semiconductor |
| Package | TO-225AA, TO-126-3 |
| Datasheet | BD676(A), 78(A), 80(A), 82(T) |
| Description | Bipolar (BJT) Transistor PNP - Darlington 45V 4A 40W Through Hole TO-225AA |
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Specifications
- Manufacturer ON Semiconductor
- Series -
- Packaging Bulk
- Part Status Obsolete
- Transistor Type PNP - Darlington
- Current - Collector (Ic) (Max) 4A
- Voltage - Collector Emitter Breakdown (Max) 45V
- Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
- Current - Collector Cutoff (Max) 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A, 3V
- Power - Max 40W
- Frequency - Transition -
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package TO-225AA
- Base Part Number BD676
- detail Bipolar (BJT) Transistor PNP - Darlington 45V 4A 40W Through Hole TO-225AA
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