SP8K1TB-VB
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| Manufacturer | VBsemi Elec |
| Package | --- |
| Datasheet | SP8K1TB-VB |
| Description | --- |
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规格
- RoHS true
- Type 2 N-Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet VBsemi Elec SP8K1TB-VB
- Power Dissipation (Pd) 2.7W
- Drain Source Voltage (Vdss) 30V
- Continuous Drain Current (Id) 6.8A
- Gate Threshold Voltage (Vgs(th)@Id) 2.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 22mΩ@10V,5A
- Package SOP-8
- Manufacturer VBsemi Elec
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