BCP55,115
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| Manufacturer | Nexperia |
| Package | --- |
| Datasheet | BCP55,115 |
| Description | --- |
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规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Nexperia BCP55,115
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 1A
- Power Dissipation (Pd) 1.35W
- Transition Frequency (fT) 180MHz
- DC Current Gain (hFE@Ic,Vce) 63@150mA,2V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@500mA,50mA
- Package SOT-223
- Manufacturer Nexperia
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