SI2302-HXY
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| Manufacturer | HXY MOSFET |
| Package | --- |
| Datasheet | SI2302-HXY |
| Description | --- |
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规格
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet HXY MOSFET SI2302-HXY
- Power Dissipation (Pd) 0.9W
- Drain Source Voltage (Vdss) 20V
- Input Capacitance (Ciss@Vds) 260pF@10V
- Continuous Drain Current (Id) 2.8A
- Gate Threshold Voltage (Vgs(th)@Id) 1.2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 55mΩ@4.5V,2.8A
- Package SOT-23(TO-236)
- Manufacturer HXY MOSFET
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