1N60G
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| Manufacturer | UMW(Youtai Semiconductor Co., Ltd.) |
| Package | --- |
| Datasheet | 1N60G |
| Description | --- |
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规格
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet UMW(Youtai Semiconductor Co., Ltd.) 1N60G
- Power Dissipation (Pd) -
- Drain Source Voltage (Vdss) 600V
- Continuous Drain Current (Id) 1A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 11Ω@10V,500mA
- Package SOT-223
- Manufacturer UMW(Youtai Semiconductor Co., Ltd.)
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