FGD2736G3-F085V
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| Manufacturer | onsemi |
| Package | --- |
| Datasheet | FGD2736G3-F085V |
| Description | --- |
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规格
- RoHS true
- Type -
- Category Triode/MOS Tube/Transistor/IGBTs
- Datasheet onsemi FGD2736G3-F085V
- Operating Temperature 40°C~+175°C@(Tj)
- Collector Current (Ic) 37.5A
- Power Dissipation (Pd) 150W
- Turn?on Delay Time (Td(on)) 900ns
- Input Capacitance (Cies@Vce) -
- Turn?on Switching Loss (Eon) -
- Total Gate Charge (Qg@Ic,Vge) 18nC
- Turn?off Delay Time (Td(off)) 4.4us
- Diode Reverse Recovery Time (Trr) 3us
- Collector-Emitter Breakdown Voltage (Vces) 360V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic) 1.65V@4.5V,10A
- Package TO-252
- Manufacturer onsemi
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