PSMN6R4-30MLDX
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| Manufacturer | Nexperia |
| Package | --- |
| Datasheet | PSMN6R4-30MLDX |
| Description | --- |
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规格
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Nexperia PSMN6R4-30MLDX
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 51W
- Total Gate Charge (Qg@Vgs) 13.7nC@10V
- Drain Source Voltage (Vdss) 30V
- Input Capacitance (Ciss@Vds) 832pF@15V
- Continuous Drain Current (Id) 66A
- Gate Threshold Voltage (Vgs(th)@Id) 2.2V@1mA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 6.3mΩ@15A,10V
- Package SOT-1210
- Manufacturer Nexperia
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