2N5401-AT/P
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| Manufacturer | KEC Semicon |
| Package | --- |
| Datasheet | 2N5401-AT/P |
| Description | --- |
sellers 2N5401-AT/P
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规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet KEC Semicon 2N5401-AT/P
- Transistor Type -
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 600mA
- Power Dissipation (Pd) 625mW
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 60@10mA,5V
- Collector Cut-Off Current (Icbo) 50nA
- Collector-Emitter Breakdown Voltage (Vceo) 150V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@50mA,5mA
- Package TO-92
- Manufacturer KEC Semicon
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