20P06 TO252-VB
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| Manufacturer | VBsemi Elec |
| Package | --- |
| Datasheet | 20P06 TO252-VB |
| Description | --- |
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规格
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet VBsemi Elec 20P06 TO252-VB
- Power Dissipation (Pd) 4W
- Drain Source Voltage (Vdss) 60V
- Continuous Drain Current (Id) 30A
- Gate Threshold Voltage (Vgs(th)@Id) 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 61mΩ@10V,5A
- Package TO-252
- Manufacturer VBsemi Elec
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