价格变化
规格
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDN336P
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 500mW
- Total Gate Charge (Qg@Vgs) 5nC@4.5V
- Drain Source Voltage (Vdss) 20V
- Input Capacitance (Ciss@Vds) 330pF@10V
- Continuous Drain Current (Id) 1.3A
- Gate Threshold Voltage (Vgs(th)@Id) 1.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 200mΩ@4.5V,1.3A
- Package SOT-23(TO-236)
- Manufacturer onsemi
- Series PowerTrench®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs 200mOhm @ 1.3A, 4.5V
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
- Vgs (Max) ±8V
- Input Capacitance (Ciss) (Max) @ Vds 330pF @ 10V
- FET Feature -
- Power Dissipation (Max) 500mW (Ta)
- Mounting Type Surface Mount
- Supplier Device Package SuperSOT-3
- Package / Case TO-236-3, SC-59, SOT-23-3
- Base Part Number FDN336
- detail P-Channel 20V 1.3A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
