NDP6060
在 2 商店
价格尚未确定
| Manufacturer | ON Semiconductor |
| Package | TO-220-3 |
| Datasheet | NDP6060, NDB6060 |
| Description | --- |
价格变化
规格
- Manufacturer ON Semiconductor
- Series -
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 25mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
- FET Feature -
- Power Dissipation (Max) 100W (Tc)
- Operating Temperature -65°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number NDP606
