价格变化
规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet MSKSEMI 2SB772
- Package TO-252
- Manufacturer MSKSEMI
- Transistor Type -
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 3A
- Power Dissipation (Pd) 1W
- Transition Frequency (fT) 50MHz
- DC Current Gain (hFE@Ic,Vce) 100@1A,2V
- Collector Cut-Off Current (Icbo) 1uA
- Collector-Emitter Breakdown Voltage (Vceo) 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@2A,200mA
- Series -
- Packaging Tube
- Part Status Obsolete
- Current - Collector (Ic) (Max) 3A
- Voltage - Collector Emitter Breakdown (Max) 30V
- Vce Saturation (Max) @ Ib, Ic 1.1V @ 150mA, 3A
- Current - Collector Cutoff (Max) 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 2V
- Power - Max 12.5W
- Frequency - Transition 100MHz
- Mounting Type Through Hole
- Package / Case TO-225AA, TO-126-3
- Supplier Device Package SOT-32-3
- Base Part Number 2SB7