规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet CBI BC847A
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 100mA
- Power Dissipation (Pd) 200mW
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 110@2mA,5V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 65V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@100mA,5mA
- Package SOT-23(TO-236)
- Manufacturer CBI
