价格变化
规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet GOODWORK S8050
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) -
- Power Dissipation (Pd) 300mW
- Transition Frequency (fT) 30MHz
- DC Current Gain (hFE@Ic,Vce) 100@50mA,1V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 25V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@500mA,50mA
- Package SOT-23(TO-236)
- Manufacturer GOODWORK