规格
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet HL(Haolin Elec) 2SB647
- Transistor Type PNP
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 1A
- Power Dissipation (Pd) 900mW
- Transition Frequency (fT) 140MHz
- DC Current Gain (hFE@Ic,Vce) 60@150mA,5V
- Collector Cut-Off Current (Icbo) 10uA
- Collector-Emitter Breakdown Voltage (Vceo) 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1V@500mA,50mA
- Package SOT-89
- Manufacturer HL(Haolin Elec)