دیتاشیت MJD31C
مشخصات دیتاشیت
| نام دیتاشیت |
MJD31C
|
| حجم فایل |
935.432
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
3
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. MJD31C
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
3A
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Power Dissipation (Pd):
15W
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Transition Frequency (fT):
3MHz
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DC Current Gain (hFE@Ic,Vce):
15@3A,4V
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Collector Cut-Off Current (Icbo):
20uA
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Collector-Emitter Breakdown Voltage (Vceo):
100V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1.2V@3A,375mA
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Package:
TO-252
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Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.
