PDTC143ZE 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Digital Transistors
- Datasheet: Shanghai Prisemi Elec PDTC143ZE
- Input Resistor: 4.7kΩ
- Resistor Ratio: 10
- Transistor Type: 1 NPN - Pre Biased
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 100mA
- Power Dissipation (Pd): 150mW
- Transition Frequency (fT): 250MHz
- DC Current Gain (hFE@Ic,Vce): 80@10mA,5V
- Input Voltage (VI(on)@Ic,Vce): 1.3V@5mA,0.3V
- Output Voltage (VO(on)@Io/Ii): -
- Input Voltage (VI(off)@Ic,Vce): 0.5V@100uA,5V
- Collector Cut-Off Current (Icbo): -
- Collector-Emitter Breakdown Voltage (Vceo): -
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): -
- Package: SOT-523-3
- Manufacturer: Shanghai Prisemi Elec