دیتاشیت ترانزیستور FQPF6N60C
مشخصات دیتاشیت
نام دیتاشیت | FQP(F)6N60C |
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حجم فایل | 1073.911 کیلوبایت |
نوع فایل | |
تعداد صفحات | 12 |
دانلود دیتاشیت FQP(F)6N60C |
FQP(F)6N60C Datasheet |
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مشخصات
- Manufacturer: ON Semiconductor
- Series: QFET®
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
- Base Part Number: FQPF6
- detail: N-Channel 600V 5.5A (Tc) 40W (Tc) Through Hole TO-220F