دیتاشیت NDS356AP.
مشخصات دیتاشیت
| نام دیتاشیت |
NDS356AP
|
| حجم فایل |
158.219
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
Manufacturer:
ON Semiconductor
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Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
-
Current - Continuous Drain (Id) @ 25°C:
1.1A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
-
Rds On (Max) @ Id, Vgs:
200mOhm @ 1.3A, 10V
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
4.4nC @ 5V
-
Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
280pF @ 10V
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FET Feature:
-
-
Power Dissipation (Max):
500mW (Ta)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
SuperSOT-3
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Base Part Number:
NDS356
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detail:
P-Channel 30V 1.1A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
