IRFU120NPBF 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IRFU120NPBF
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 48W
- Total Gate Charge (Qg@Vgs): 25nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 330pF@25V
- Continuous Drain Current (Id): 9.4A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 210mΩ@10V,5.6A
- Package: TO-251
- Manufacturer: Infineon Technologies
