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PJ1117CM-25 Datasheet
Datasheet specifications
| Datasheet's name | J111-12 |
|---|---|
| File size | 87.421 KB |
| File type | |
| Number of pages | 5 |
Download Datasheet J111-12 |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- Manufacturer: ON Semiconductor
- Series: -
- Packaging: Bulk
- Part Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35V
- Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
- Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 30 Ohms
- Power - Max: 625mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Base Part Number: J111
- detail: JFET N-Channel 35V 625mW Through Hole TO-92-3
