دیتاشیت SUM110P08-11L-E3
مشخصات دیتاشیت
نام دیتاشیت | SUM110P08-11L-E3 |
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حجم فایل | 83.862 کیلوبایت |
نوع فایل | |
تعداد صفحات | 8 |
دانلود دیتاشیت SUM110P08-11L-E3 |
SUM110P08-11L-E3 Datasheet |
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مشخصات
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SUM110P08-11L-E3
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 13.6W;375W
- Total Gate Charge (Qg@Vgs): 270nC@10V
- Drain Source Voltage (Vdss): 80V
- Input Capacitance (Ciss@Vds): 10850pF@40V
- Continuous Drain Current (Id): 110A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 11.2mΩ@20A,10V
- Package: TO-263-2
- Manufacturer: Vishay Intertech