BD135. Datasheet

BD135G,137G,139G

Datasheet specifications

Datasheet's name BD135G,137G,139G
File size 82.355 KB
File type pdf
Number of pages 4

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Technical specifications

  • Manufacturer: ON Semiconductor
  • Series: -
  • Packaging: Bulk
  • Part Status: Obsolete
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 1.25W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-225AA
  • Base Part Number: BD135
  • detail: Bipolar (BJT) Transistor NPN 45V 1.5A 1.25W Through Hole TO-225AA

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