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- Datasheet 2SC5824T100R
2SC5824T100R Datasheet
Datasheet specifications
| Datasheet's name | 2SC5824T100R |
|---|---|
| File size | 71.685 KB |
| File type | |
| Number of pages | 8 |
Download Datasheet 2SC5824T100R |
Download Datasheet |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: ROHM Semicon 2SC5824T100R
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 3A
- Power Dissipation (Pd): 2W
- Transition Frequency (fT): 200MHz
- DC Current Gain (hFE@Ic,Vce): 180@100mA,2V
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@2A,200mA
- Package: SOT-89
- Manufacturer: ROHM Semicon