2SK3018 数据手册

2SK3018

数据手册规格

数据手册名称 2SK3018
文件大小 40.501 千字节
文件类型 pdf
页数 6

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2SK3018 2 pages

技术规格

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: JSMSEMI 2SK3018
  • Package: SOT-23(TO-236)
  • Manufacturer: JSMSEMI
  • Type: N Channel
  • Power Dissipation (Pd): 350mW
  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 100mA
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@100uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8Ω@4V,10mA
  • Operating Temperature: +150°C@(Tj)
  • Input Capacitance (Ciss@Vds): 13pF@5V
  • Reverse Transfer Capacitance (Crss@Vds): 4pF@5V
  • Total Gate Charge (Qg@Vgs): -

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