HBDM60V600W-7 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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HBDM60V600W-7
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حجم فایل
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85.035
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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7
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Diodes Incorporated HBDM60V600W-7
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Transistor Type:
1PCSNPN&1PCSPNP
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
500mA;600mA
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Transition Frequency (fT):
100MHz
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DC Current Gain (hFE@Ic,Vce):
100@100mA,1V;100@150mA,10V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
65V;60V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@50mA,500mA
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Package:
SOT-323-6
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Manufacturer:
Diodes Incorporated
