دیتاشیت CSD88537ND
مشخصات دیتاشیت
| نام دیتاشیت |
CSD88537ND
|
| حجم فایل |
455.623
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
12
|
مشخصات
-
RoHS:
true
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Type:
2 N-Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Texas Instruments CSD88537ND
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
2.1W
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Total Gate Charge (Qg@Vgs):
18nC@10V
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Drain Source Voltage (Vdss):
60V
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Input Capacitance (Ciss@Vds):
1400pF@30V
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Continuous Drain Current (Id):
15A
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Gate Threshold Voltage (Vgs(th)@Id):
3.6V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
15mΩ@10V,8A
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Package:
SOP-8
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Manufacturer:
Texas Instruments
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Input Capacitance (Ciss) (Max) @ Vds:
1400pF @ 30V
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Supplier Device Package:
8-SOIC
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Packaging:
Cut Tape (CT)
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Mounting Type:
Surface Mount
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Base Part Number:
CSD88537
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Vgs(th) (Max) @ Id:
3.6V @ 250µA
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FET Type:
2 N-Channel (Dual)
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FET Feature:
Standard
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Package / Case:
8-SOIC (0.154", 3.90mm Width)
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Part Status:
Active
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Series:
NexFET™
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Drain to Source Voltage (Vdss):
60V
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Rds On (Max) @ Id, Vgs:
15mOhm @ 8A, 10V
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Current - Continuous Drain (Id) @ 25°C:
15A
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Power - Max:
2.1W
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Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V
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detail:
Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SOIC
