CSD88537ND 数据手册
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CSD88537ND 12 pages
技术规格
- RoHS: true
- Type: 2 N-Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Texas Instruments CSD88537ND
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 2.1W
- Total Gate Charge (Qg@Vgs): 18nC@10V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 1400pF@30V
- Continuous Drain Current (Id): 15A
- Gate Threshold Voltage (Vgs(th)@Id): 3.6V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 15mΩ@10V,8A
- Package: SOP-8
- Manufacturer: Texas Instruments
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
- Supplier Device Package: 8-SOIC
- Packaging: Cut Tape (CT)
- Mounting Type: Surface Mount
- Base Part Number: CSD88537
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Part Status: Active
- Series: NexFET™
- Drain to Source Voltage (Vdss): 60V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Power - Max: 2.1W
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- detail: Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SOIC