FQN1N60CTA دیتاشیت

FQN1N60CTA

مشخصات دیتاشیت

نام دیتاشیت FQN1N60CTA
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت FQN1N60CTA

دانلود دیتاشیت

سایر مستندات

FQN1N60C 10 pages

مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQN1N60CTA
  • Power Dissipation (Pd): -
  • Total Gate Charge (Qg@Vgs): -
  • Drain Source Voltage (Vdss): -
  • Input Capacitance (Ciss@Vds): -
  • Continuous Drain Current (Id): -
  • Gate Threshold Voltage (Vgs(th)@Id): -
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): -
  • Package: TO-92-2.54mm
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Base Part Number: FQN1
  • detail: N-Channel 600V 300mA (Tc) 1W (Ta), 3W (Tc) Through Hole TO-92-3

محصولات مشابه