دیتاشیت IRF100S201
مشخصات دیتاشیت
| نام دیتاشیت |
IRF100S201
|
| حجم فایل |
85.839
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
12
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Infineon Technologies IRF100S201
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
441W
-
Total Gate Charge (Qg@Vgs):
255nC@10V
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
9500pF@50V
-
Continuous Drain Current (Id):
192A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
4.2mΩ@10V,115A
-
Package:
TO-263
-
Manufacturer:
Infineon Technologies
