دیتاشیت BSS123LT1G
مشخصات دیتاشیت
نام دیتاشیت |
BSS123L
|
حجم فایل |
435.822
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
8
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
100V
-
Current - Continuous Drain (Id) @ 25°C:
170mA (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
-
Rds On (Max) @ Id, Vgs:
6Ohm @ 170mA, 10V
-
Vgs(th) (Max) @ Id:
2V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
21.5pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
360mW (Ta)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
SOT-23-3
-
Package / Case:
TO-236-3, SC-59, SOT-23-3
-
Base Part Number:
BSS123
-
detail:
N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3