دیتاشیت SI4435DY

SI4435DY

مشخصات دیتاشیت

نام دیتاشیت SI4435DY
حجم فایل 232.092 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

دانلود دیتاشیت SI4435DY

SI4435DY Datasheet

مشخصات

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi SI4435DY
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 2.5W
  • Total Gate Charge (Qg@Vgs): 24nC@5V
  • Drain Source Voltage (Vdss): 30V
  • Input Capacitance (Ciss@Vds): 1604pF@15V
  • Continuous Drain Current (Id): 8.8A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@8.8A,10V
  • Package: SO-8
  • Manufacturer: onsemi
  • Series: PowerTrench®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1604pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Base Part Number: SI443
  • detail: P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

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