BC857C Datasheet

BC857C

Datasheet specifications

Datasheet's name BC857C
File size 51.903 KB
File type pdf
Number of pages 4

Download Datasheet BC857C

Download Datasheet

Other documentations

BC857B 5 pages

BC856B 4 pages

BC856B 5 pages

BC857C 4 pages

BC857C 3 pages

Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: LGE BC857C
  • Transistor Type: PNP
  • Operating Temperature: -65°C~+150°C@(Tj)
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 250mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 420@2mA,5V
  • Collector Cut-Off Current (Icbo): 1nA
  • Collector-Emitter Breakdown Voltage (Vceo): 45V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@10mA,500uA
  • Package: SOT-23
  • Manufacturer: LGE

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