BC856A Datasheet

BC856A

Datasheet specifications

Datasheet's name BC856A
File size 53.674 KB
File type pdf
Number of pages 5

Download Datasheet BC856A

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Other documentations

BC857B 5 pages

BC856B 4 pages

BC856A 5 pages

Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Yangzhou Yangjie Elec Tech BC856A
  • Transistor Type: PNP
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 200mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 125@2mA,5V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 65V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 650mV@100mA,5mA
  • Package: SOT-23(TO-236)
  • Manufacturer: Yangzhou Yangjie Elec Tech

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