دیتاشیت MMBT5179

مشخصات دیتاشیت

دانلود دیتاشیت MPS5179,MMBT5179,PN5179	MPS5179,MMBT5179,PN5179 Datasheet

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi MMBT5179
Transistor Type: NPN
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 50mA
Power Dissipation (Pd): 225mW
Transition Frequency (fT): 900MHz
DC Current Gain (hFE@Ic,Vce): 25@3mA,10V
Collector Cut-Off Current (Icbo): 20nA
Collector-Emitter Breakdown Voltage (Vceo): 12V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@10mA,1mA
Package: SOT-23
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBT5179
detail: RF Transistor NPN 12V 50mA 2GHz 225mW Surface Mount SOT-23-3 (TO-236)