NDC7002N دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت NDC7002N	دانلود دیتاشیت

RoHS: true
Type: 2 N-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NDC7002N
Power Dissipation (Pd): 960mW
Drain Source Voltage (Vdss): 50V
Continuous Drain Current (Id): 510mA
Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 2Ω@10V,510mA
Package: SOT-23-6
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 510mA
Rds On (Max) @ Id, Vgs: 2Ohm @ 510mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT™-6
Base Part Number: NDC700
detail: Mosfet Array 2 N-Channel (Dual) 50V 510mA 700mW Surface Mount SuperSOT™-6