دیتاشیت 2SA1012
مشخصات دیتاشیت
| نام دیتاشیت |
2SA1012
|
| حجم فایل |
3512.911
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
3
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. 2SA1012
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
5A
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Power Dissipation (Pd):
1.25W
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Transition Frequency (fT):
60MHz
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DC Current Gain (hFE@Ic,Vce):
120@1A,1V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
50V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
400mV@3A,150mA
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Package:
TO-252
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Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.
