دیتاشیت IRF630NPBF
مشخصات دیتاشیت
| نام دیتاشیت |
IRF630NPBF
|
| حجم فایل |
77.088
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
11
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Infineon Technologies IRF630NPBF
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
82W
-
Total Gate Charge (Qg@Vgs):
35nC@10V
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Drain Source Voltage (Vdss):
200V
-
Input Capacitance (Ciss@Vds):
575pF@25V
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Continuous Drain Current (Id):
9.3A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
300mΩ@10V,5.4A
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Package:
TO-220
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Manufacturer:
Infineon Technologies
