دیتاشیت IRF640NPBF ماسفت نوع N
مشخصات دیتاشیت
نام دیتاشیت | IRF640(FP) |
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حجم فایل | 340.778 کیلوبایت |
نوع فایل | |
تعداد صفحات | 14 |
دانلود دیتاشیت IRF640(FP) |
IRF640(FP) Datasheet |
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مشخصات
- Manufacturer: STMicroelectronics
- Series: MESH OVERLAY™
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
- Base Part Number: IRF6
- detail: N-Channel 200V 18A (Tc) 125W (Tc) Through Hole TO-220AB