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FDD5612 TO-252 Datasheet
Datasheet specifications
| Datasheet's name | FDD5612 |
|---|---|
| File size | 373.736 KB |
| File type | |
| Number of pages | 5 |
Download Datasheet FDD5612 |
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Technical specifications
- Manufacturer: ON Semiconductor
- Series: PowerTrench®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 30V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number: FDD561
- detail: N-Channel 60V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252-3