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FQA44N30 TO-3P TO-3P Datasheet
Datasheet specifications
| Datasheet's name | FQA44N30 |
|---|---|
| File size | 2277.506 KB |
| File type | |
| Number of pages | 10 |
Download Datasheet FQA44N30 |
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Technical specifications
- Manufacturer: ON Semiconductor
- Series: QFET®
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 69mOhm @ 21.75A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
- Base Part Number: FQA4
- detail: N-Channel 300V 43.5A (Tc) 310W (Tc) Through Hole TO-3PN