دیتاشیت STP8NK100Z ماسفت
مشخصات دیتاشیت
نام دیتاشیت |
ST(F,P)8NK100Z
|
حجم فایل |
297.784
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
13
|
مشخصات
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Manufacturer:
STMicroelectronics
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Series:
SuperMESH™
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
1000V
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Current - Continuous Drain (Id) @ 25°C:
6.5A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
1.85Ohm @ 3.15A, 10V
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Vgs(th) (Max) @ Id:
4.5V @ 100µA
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Gate Charge (Qg) (Max) @ Vgs:
102nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
2180pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
160W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220AB
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Package / Case:
TO-220-3
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Base Part Number:
STP8N
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detail:
N-Channel 1000V 6.5A (Tc) 160W (Tc) Through Hole TO-220AB