دیتاشیت FDC658AP 58A SOT-23-6 ماسفت کانال P
مشخصات دیتاشیت
نام دیتاشیت | FDC658AP |
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حجم فایل | 218.138 کیلوبایت |
نوع فایل | |
تعداد صفحات | 5 |
دانلود دیتاشیت FDC658AP |
FDC658AP Datasheet |
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مشخصات
- Manufacturer: ON Semiconductor
- Series: PowerTrench®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 15V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT™-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Base Part Number: FDC658
- detail: P-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6