دیتاشیت STH315N10F7-6 H2PAK-6 ماسفت کانال N

STH315N10F7-2,STH315N10F7-6

مشخصات دیتاشیت

نام دیتاشیت STH315N10F7-2,STH315N10F7-6
حجم فایل 1167.773 کیلوبایت
نوع فایل pdf
تعداد صفحات 19

دانلود دیتاشیت STH315N10F7-2,STH315N10F7-6

STH315N10F7-2,STH315N10F7-6 Datasheet

مشخصات

  • Manufacturer: STMicroelectronics
  • Series: Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 315W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2PAK-6
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
  • Base Part Number: STH315
  • detail: N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6

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