دیتاشیت HGTG10N120BND TO-247 IGBT
مشخصات دیتاشیت
نام دیتاشیت | HGTG10N120BND |
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حجم فایل | 236.19 کیلوبایت |
نوع فایل | |
تعداد صفحات | 10 |
دانلود دیتاشیت HGTG10N120BND |
HGTG10N120BND Datasheet |
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مشخصات
- Manufacturer: ON Semiconductor
- Series: -
- Packaging: Tube
- Part Status: Not For New Designs
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 35A
- Current - Collector Pulsed (Icm): 80A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
- Power - Max: 298W
- Switching Energy: 850µJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: 100nC
- Td (on/off) @ 25°C: 23ns/165ns
- Test Condition: 960V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr): 70ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Base Part Number: HGTG10N120
- detail: IGBT NPT 1200V 35A 298W Through Hole TO-247-3