دیتاشیت CSD19533Q5A Datasheet

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Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Series: NexFET™
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 13A, 10V
Supplier Device Package: 8-VSONP (5x6)
Vgs (Max): ±20V
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Packaging: Cut Tape (CT)
Manufacturer: Texas Instruments
Power Dissipation (Max): 3.2W (Ta), 96W (Tc)
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Base Part Number: CSD19533
FET Type: N-Channel
Package / Case: 8-PowerTDFN
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 50V
Part Status: Active
detail: N-Channel 100V 100A (Ta) 3.2W (Ta), 96W (Tc) Surface Mount 8-VSONP (5x6)